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InP-based 1.55 µm waveguide-integrated photodetectors for high-speed applications

: Beling, A.

Sidorin, Y.; Wächter, C ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Integrated optics: devices, materials, and technologies X : 23 - 25 January 2006, San Jose, California, USA
Bellingham, WA: SPIE, 2006 (SPIE Proceedings Series 6123)
ISBN: 0-8194-6165-2
ISBN: 978-0-8194-6165-0
Conference "Integrated Optics - Devices, Materials, and Technologies" <10, 2006, San Jose/Calif.>
Fraunhofer HHI ()
high-speed optical techniques; III-V semiconductor; indium compound; integrated optoelectronics; monolithic integrated circuits; optical waveguide; photodetector; p-i-n photodiode

The paper reviews key characteristics of ultra fast evanescently coupled waveguide-integrated p-i-n photodetectors for 1.55µm wavelength. In detail, a highly efficient 100 GHz photodetector module and a low-capacitance miniaturized photodiode with 120 GHz bandwidth employing an optical matching layer for enhanced responsivity are reported. Furthermore, recent results on monolithically integrated traveling wave photodetectors based on discrete miniaturized photodiodes with parallel optical feed are presented.