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Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers

Experimentelle Untersuchung der Gitter-und-elektronischen Temperaturen in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx Quantenkaskadenlasern
: Vitiello, M.S.; Scarmacio, G.; Spagnolo, V.; Lops, A.; Yang, Q.K.; Manz, C.; Wagner, J.


Applied Physics Letters 90 (2007), Nr.12, Art. 121109, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
electronic temperature; elektronische Temperatur; GaInAs/AlGaAsSb; quantum cascade laser; Quantenkaskadenlaser; lattice temperature; Gitter-Temperatur

The authors extracted the thermal resistance (R(ind L)=9.6 K/W) and the electrical power dependence of the electronic temperature (R(ind e)=12.5 K/W) of Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers (QCLs) operating at 4.9 µm, in the lattice temperature range of 60-90 K. The low electron-lattice coupling constant alpha=10.4 K cm2/kA can be related to the beneficial effect of the high conduction band offset, peculiar to the GaInAs/AlGaAsSb materials system, on the electron leakage. The authors found an active region cross-plane thermal conductivity value k =1.8±0.1 W/(K m), which is approximately three times larger than that measured in QCLs with GaInAs/AlInAs heterostructures.