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2018
Conference Paper
Titel
Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Alternative
Platin in Silicium nach Implantation und Ausheilung: Vom Experiment zur Prozess- und Bauelementesimulation
Abstract
Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 °C and the dose range from 1E12 to 1E13 cm−2. The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.
Author(s)