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Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

: Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.


Gammon, Peter M.:
Silicon Carbide and Related Materials 2018 : Selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018
Durnten-Zurich: TTP, 2019 (Materials Science Forum 963)
ISBN: 978-3-0357-1332-9
ISBN: 978-3-0357-2332-8
ISBN: 978-3-0357-3332-7
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Fraunhofer IISB ()

The possibility to analyze micrometer scaled 2D implantation profiles is essential for improving SiC power devices. Due to the fact that the oxidation rate depends on the doping concentration a rather simple method was developed in order to decorate highly doped (aluminum) implantation profiles. For this purpose, different samples were grinded with a shallow bevel angle and subsequently oxidized. It could be shown that this method allows analyzing the implantation depth of different box-shape implanted samples. Furthermore the ability to distinguish micrometer scaled 2D profiles for a state-of-the-art SiC power device could be shown.