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InP DHBT based IC technology for over 80 Gbit/s data communications

InP DHBT-basierende Technologie für integrierte Schaltungen in Datenkommunikationsanwendungen über 80 Gbit/s
: Driad, R.; Makon, R.E.; Schneider, K.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.


Enoki, T. ; Institute of Electronics, Information and Communication Engineers -IEICE-, Tokyo:
Special section on heterostructure microelectronics with TWHM 2005 : Extended papers from the Sixth Topical Workshop on Heterostructure Microelectronics (TWHM 2005), which was held at Awaji Island on August 2005
Tokyo: IEICE, 2006 (IEICE transactions on electronics. E, English transactions 89.2006,7)
Topical Workshop on Heterostructure Microelectronics (TWHM) <6, 2005, Awaji Island>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IAF ()
InP; InP-DHBT; double heterojunction bipolar transistor; IC; integrated circuit; amplifier; VCO; voltage controlled oscillator; multiplexer; Doppel-Hetero-Bipolar-Transistor; integrierte Schaltung; Verstärker; Oszillator; spannungsgesteuerter Oszillator

In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8 µm2 exhibited peak cutoff frequency (f(ind T)) and maximum oscillation frequency (f(ind MAX)) values of 265 and 305 GHz, respectively, and a breakdown voltage (BV(ind CEo)) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for >= 80 Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.