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A novel high photon detection effciency silicon photomultiplier with shallow junction in 0.35 μm CMOS

: D'Ascenzo, Nicola; Antonecchia, Emanuele; Brensing, Andreas; Brockherde, Werner; Dreiner, Stefan; Ewering, Johannes; Kuhn, Marvin; Schmidt, Andrei; Stein, Peter vom; Wang, Weidong; Zhou, Zhenliang; Xie, Qingguo


IEEE Electron Device Letters 40 (2019), Nr.9, S.1471-1474
ISSN: 0741-3106
ISSN: 0193-8576
Fraunhofer IMS ()
silicon photomultiplier (SiPM); CMOS; shallow junction

We present a novel silicon photomultiplier based on a shallow junction obtained within a standard 0.35 m complementary metal oxide semiconductor process. The sensitive structure is equipped with a dedicated optical window as well as an optimized antireflective coating. The device exhibits performances comparable to custom-based commercial technologies: an unprecedented photon detection effciency of 43% at 420 nm, a breakdown voltage temperature dependence of (27.9 ± 0.9) mV/K, a dark count rate of 480 kHz/mm2, a gain of 3 x 106 and a single photon time resolution of (78 ± 2) ps (FWHM). The process proposed in this letter can be applied to new generation single photon sensors with on-chip integrated intelligent electronics.