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Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations

: Kim, Hong-Ki; Kim, Seongjun; Buettner, Jonas; Lim, Minwho; Erlbacher, Tobias; Bauer, Anton J.; Koo, Sang-Mo; Lee, Nam-Suk; Shin, Hoon-Kyu


Gammon, Peter M.:
Silicon Carbide and Related Materials 2018 : Selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018
Durnten-Zurich: TTP, 2019 (Materials Science Forum 963)
ISBN: 978-3-0357-1332-9
ISBN: 978-3-0357-2332-8
ISBN: 978-3-0357-3332-7
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Fraunhofer IISB ()
4H-SiC; ion implantation; surface property; work function; binding energy

In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS analysis, work function and Si-C binding energy of implanted samples were increased compared to the reference 4H-SiC sample. Those variations may be caused by lattice disorder and amorphization. In addition, TEM image showed damaged area in 4H-SiC epitaxial layer.