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Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology

 
: Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
S.1403-1406
International Microwave Symposium (IMS) <2019, Boston/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride (GaN); high electron mobility transistor (HEMT); millimeter wave (mmW); millimeter-wave integrated circuit (MMIC); single pole double throw (SPDT); switch

Abstract
In this paper, the design, analysis, and performance of four millimeter-wave SPDT switch MMICs are presented. The circuits utilize a 100-nm gate-length GaN-on-SiC technology and cover four different frequency ranges almost without gap from 28 to 310 GHz. The four switches exhibit a return loss of better than 10 dB and a minimum insertion loss of 1.4, 1.5, 1.8, and 2.2 dB, respectively. Continuous-wave power data of switch 3, tested at 94 GHz, showed no insertion loss compression for a maximum available input power of 2 W. To the best of the authors’ knowledge, switch 3 and 4 are the first GaN-based switches with an operating frequency of more than 110 GHz and switch 3 is the first semiconductor switch with a measured power handling at 94 GHz of at least 2 W.

: http://publica.fraunhofer.de/dokumente/N-549652.html