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190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth

 
: Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
ISBN: 978-1-7281-1310-4
S.1257-1260
International Microwave Symposium (IMS) <2019, Boston/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
broadband; G-band (140–220 GHz); gallium nitride (GaN); high electron mobility transistor (HEMT); monolithic microwave integrated circuit (MMIC); power amplifier (PA)

Abstract
We report on three state-of-the-art G-band (140–220 GHz) GaN amplifier MMICs. A 4-stage common-source amplifier can provide a small-signal gain of 10 dB at 190 GHz with a 3-dB bandwidth of 40GHz (156–196 GHz). A 5-stage common-source MMIC achieves up to 12 dB gain at 190 GHz with a 36-GHz (157–193 GHz) bandwidth. Additionally, a 2-stage amplifier using inductive degeneration shows 6.3dB of gain at 179 GHz with a bandwidth of 12GHz (172-184 GHz). At 190 GHz, the 5-stage amplifier can deliver 14.1 dBm (279mW/mm) of output power at the 1.8-dB gain-compression point with a corresponding power-added efficiency of 1.2 %. To the best of our knowledge, these amplifiers show the highest gain above 170GHz among any reported GaN-based MMICs. This is also the first demonstration of multi-stage GaN circuits that can provide gain up to the 200-GHz mark.

: http://publica.fraunhofer.de/dokumente/N-549647.html