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High-Q anti-series AlGaN/GaN high electron-mobility varactor

 
: Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
ISBN: 978-1-7281-1310-4
S.599-602
International Microwave Symposium (IMS) <2019, Boston/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride (GaN); high electron-mobility varactor (HEMVAR); varactor

Abstract
This paper gives a first presentation of an anti-series AlGaN/GaN high electron-mobility varactor with a tuning ratio of 4.7 and a Q factor above 100. The losses could be decreased by 30% by omitting the ohmic junctions in the signal path. The devices are characterized and a large-signal model is extracted. Comparing the anti-series varactor to a similar single varactor device shows an increased Q factor and superior linearity. The second harmonic could be decreased by 50 dB.

: http://publica.fraunhofer.de/dokumente/N-549646.html