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Imaging Interstitial Iron Concentrations in Gallium-Doped Silicon Wafers

: Post, R.; Niewelt, T.; Schön, J.; Schindler, F.; Schubert, M.C.


Physica status solidi. A 216 (2019), Nr.10, Art. 1800655, 7 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer ISE ()
Qualitätssicherung; Charakterisierung und Simulation; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien

In this work, the established method of iron imaging is transferred from B‐doped silicon to Ga‐doped material. For this purpose, the pairing and splitting conditions are investigated and a preparation procedure suggested that ensures a sufficient fraction of iron–gallium pairing and splitting, respectively. Furthermore the defect parameters available in literature are compared and evaluated for a suitable description of the injection dependent carrier lifetime measurements. A parameter set that enables a coherent and adequate iron evaluation is suggested. Thus, a robust method for spatially resolved determination of the interstitial iron concentration in Ga‐doped silicon wafers is presented.