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Design and Commissioning of a 10 kV Three-Phase Transformerless Inverter with 15 kV Silicon Carbide MOSFETs

: Thoma, J.; Volzer, B.; Kranzer, D.; Derix, D.; Hensel, A.

	Institute of Electrical and Electronics Engineers -IEEE-: 20th European Conference on Power Electronics and Applications, EPE 2018, ECCE Europe : 17-21 September 2018, Riga, Latvia Piscataway, NJ: IEEE, 2018 ISBN: 978-9-0758-1528-3 ISBN: 978-9-0758-1529-0 ISBN: 978-1-5386-4145-3 S.P.1-P.7
	European Conference on Power Electronics and Applications (EPE) <20, 2018, Riga>

	Englisch
	Konferenzbeitrag
	Fraunhofer ISE ()
	Neue Bauelemente und Technologien; Energiesystemtechnik; Leistungselektronik; voltage power converter; Silicon Carbide (SiC); device application

Abstract
A medium voltage inverter based on 15 kV Silicon Carbide (SiC) MOSFETs is presented in this paper. By using a three-level topology it is possible to feed directly into a 10 kVAC distribution grid. Measurement results of the successful operation at full output voltage are shown. A maximum efficiency of over 97% is reached.

: http://publica.fraunhofer.de/dokumente/N-548598.html