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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Oxygen Incorporation into Si Nanocrystal/SiC Multilayers
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Postprint urn:nbn:de:0011-n-5485874 (556 KByte PDF) MD5 Fingerprint: f671d3c0ebba527a5eafac84c671a5b8 © IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Erstellt am: 20.6.2019 |
Abstract
We aimed to improve the properties of Si nanocrystal/SiC multilayers (ML) for the use as high bandgap solar cell absorber by the incorporation of oxygen (O). Therefore we compare the structural properties of Si nanocrystal/SiC ML with and without incorporated O by scanning electron microscopy, Raman spectroscopy and grazing incidence X-ray diffraction patterns. The O incorporation in the form of Si-O bonds was successful and a beneficial effect of O on the conservation of the ML structure during annealing and on the cSi/c-SiC ratio is observed and discussed in detail.