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1999
Journal Article
Titel
Defect examination of diamond crystals by surface hydrogen-plasma etching
Abstract
A method to examine the defects and defect distribution in diamond crystals has been developed. To make the crystal defects visible, a high-temperature hydrogen-plasma etching was employed. By a combination of scanning electron microscopy and atomic force microscopy, the etch pits of the (001) diamond faces parallel to the substrate were observed and analyzed. The defect distribution of chemical-vapor-deposited diamond crystallites corresponds exactly with that observed by transmission electron microscopy, and can be related to the growth mode during film deposition.
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