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NBTI degradation and recovery in analog circuits: Accurate and efficient circuit-level modeling

: Giering, K.-U.; Puschkarsky, K.; Reisinger, H.; Rzepa, G.; Rott, G.; Vollertsen, R.; Grasser, T.; Jancke, R.

Postprint urn:nbn:de:0011-n-5408262 (779 KByte PDF)
MD5 Fingerprint: 79309b93235f9b2b1cd2100295e068e7
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Erstellt am: 18.4.2019

IEEE transactions on electron devices 66 (2019), Nr.4, S.1662-1668
ISSN: 0018-9383
European Commission EC
FP7; 619234; MoRV
Modelling Reliability under the Influence of Variability
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) ()

We investigate the NBTI degradation and recovery of pMOSFETs under continuously varying analog-circuit stress voltages, and thereby generalize existing digital-stress NBTI studies. Starting from our ultra-fast NBTI measurements and an extensive TCAD analysis, we study two physics-based compact models for analog-stress NBTI including recovery. The high accuracy of both models is evidenced from single-FET analog stress and circuit-level ring oscillator experiments. Their numerical efficiency allows a direct coupling to circuit simulators and permits to accurately account for NBTI already during circuit design. Furthermore, one of the models calculates the time-dependent NBTI variability of single-FET and of circuit performance parameters. We demonstrate our NBTI models on a ring oscillator and calculate the mean drift and statistical distribution of its oscillation frequency.