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Hermetical sealing of pressure sensor diaphragms by CVD of Si1-XGeX with minimized cavity deposition

 
: Walk, Christian; Netaev, Alexander; Görtz, Michael; Mokwa, Wilfried; Vogt, Holger

Otto, Thomas (Hrsg.) ; MESAGO Messe Frankfurt GmbH, Stuttgart:
Smart Systems Integration 2019 : 13th International Conference & Exhibition on Integration Issues of Miniaturized Systems, Barcelona, Spain, 10 - 11 April 2019
Berlin: VDE-Verlag, 2019
ISBN: 978-3-8007-4919-5
ISBN: 978-3-8007-4878-5
S.234-241
Smart Systems Integration Conference (SSI) <2019, Barcelona>
International Conference and Exhibition on Integration Issues of Miniaturized Systems <13, 2019, Barcelona>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()
MEMS; pressure sensor; post-CMOS; Siliciumgermanium (SiGe); sealing (technology); hermeticity

Abstract
In this work, the hermeticity of diaphragm structures for later post-CMOS integration is investigated and optimized. The diaphragms were completely made of Si1-XGeX, which is a high quality MEMS material that can be deposited at temperatures below 400 °C. The hermeticity tests of the diaphragms were performed in a helium atmosphere at 1800 hPa and in a temperature range from 50 °C to 100 °C. To calculate the diffusion coefficients, the change of diaphragm deflection caused by He-diffusion through the diaphragm is measured optically. In the fabrication process, a variation of the deposition parameters of a CVD Si1-XGeX sealing layer on a polycrystalline p+Si1-XGeX diaphragm was investigated regarding the selectivity of the layer growth on different surfaces (p+Si1-XGeX, Si, and SiO2). An increasing selectivity of the layer growth against Si and SiO2 was shown, which increases with the GeH4 ratio in the process gas flow. With a GeH4 pure gas flow, the best results were observed with the highest selectivity, a minimal diffusion and a minimal intrinsic stress of the Si1-XGeX sealing layer.

: http://publica.fraunhofer.de/dokumente/N-540763.html