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AlGaN/GaN high electron-mobility varactors on silicon substrate

 
: Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin; Institut für Mikrowellen- und Antennentechnik e.V. -IMA-:
German Microwave Conference, GeMiC 2019 : 25-27 March 2019, Stuttgart, Germany
Stuttgart, 2019
ISBN: 978-3-9812668-9-4
S.244-247
German Microwave Conference (GeMiC) <12, 2019, Stuttgart>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride (GaN); Silicon (Si); GaN on Si; varactor; high electron-mobility varactor (HEMVAR)

Abstract
This paper gives a first presentation of an AlGaN/GaN high electron-mobility varactor grown on a high resistivity silicon substrate. The technology is compared to a GaN on silicon carbide technology and the devices are characterized by fitting a large-signal model. Compared to GaN on SiC varactors a similar performance is achieved. Only slightly increased losses due to higher sheet and contact resistance lower the Q-factor of the GaN on Si varactor.

: http://publica.fraunhofer.de/dokumente/N-540614.html