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Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality

: Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger

European Space Agency -ESA-, Paris:
9th Wide Band Gap Semiconductor and Components Workshop 2018. Proceedings : 8th to 9th October 2018
Harwell, UK, 2018
Wide Band Gap Semiconductor and Components Workshop <9, 2018, Harwell, UK>
Fraunhofer IAF ()

The AlGaN/GaN-on-Si high-voltage technology has received significant attention over the past several years. Fast improvements in terms of static and especially dynamic properties of AlGaN/GaN HEMTs have been achieved. Compared to conventional (vertical) technologies such as IGBTs or power MOSFETs, the lateral GaN-on-Si technology features the possibility to integrate multiple high-voltage devices on a single chip. Monolithic integration is desirable for several reasons, including reduced costs in terms of assembly and reduced chip area. Furthermore, a more compact switching cell leads to the reduction of parasitic inductances and capacitances, which opens opportunities for high efficiency operation and higher switching frequencies as well as improved reliability. It is anticipated that monolithic integration in lateral wide bandgap technology will lead to substantially improved size, efficiency and cost trade-offs in power conversion applications. Additionally, a higher functionality of the chip is desired in order to extend the range of applications. A monitoring of the precise in-chip temperature enables an optimum control of the operation adapted to the matters of the application.