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Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

: Stockmeier, Ludwig; Kranert, Christian; Fischer, Peter; Epelbaum, Boris; Reimann, Christian; Friedrich, Jochen; Raming, Georg; Miller, Alfred

Preprint urn:nbn:de:0011-n-5375186 (1.1 MByte PDF)
MD5 Fingerprint: ec76045ac07c26b0a6cd01e71437d041
Erstellt am: 19.3.2019

Journal of Crystal Growth 515 (2019), S.26-31
ISSN: 0022-0248
European Commission EC
H2020; 662133; PowerBase
Enhanced substrates and GaN pilot lines enabling compact power applications
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
facet; Growth Ridges; Czochralski method; single crystal growth; semiconducting silicon

A contactless, non-destructive approach to measure the geometrical parameters of the growth ridge, based on surface topography, is presented and established. It allows a systematic, large scale analysis of growth ridges of single crystals of almost any type. Here, it is applied to Czochralski-grown silicon crystals. Based on the measurement results, Voronkovs theory of the shape of the growth ridge is verified. This theory is used to calculate the temperature gradient at the growth ridge from the geometrical parameters. The presented method gives an easy, direct experimental access to the thermal conditions, both qualitative and quantitative, at the solid-liquid interface during the growth process.