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2019
Conference Paper
Titel
Self-aligned organic thin-film transistors for flexible electronics
Abstract
he digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ino®flex Z3 and ino®flex T3 regarding their frequencydependent dielectric constant and surface properties. TFTs using either ino®flex Z3 or ino®flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ino®flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.