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Self-aligned organic thin-film transistors for flexible electronics

: Meyers, T.; Reker, J.; Temme, J.; Vidor, F.F.; Hilleringmann, U.


Du Plessis, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 : 8-10 October 2018, Skukuza, South Africa
Bellingham, WA: SPIE, 2019 (Proceedings of SPIE 11043)
ISBN: 978-1-5106-2753-6
ISBN: 978-1-5106-2752-9
Paper 1104313, 6 S.
South African Conference on Sensors, MEMS, and Electro-Optic Systems (SMEOS) <5, 2018, Skukuza>
Fraunhofer ENAS ()

he digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ino®flex Z3 and ino®flex T3 regarding their frequencydependent dielectric constant and surface properties. TFTs using either ino®flex Z3 or ino®flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ino®flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.