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Improved organic thin-film transistor performance by dielectric layer patterning

: Meyers, T.; Reker, J.; Temme, J.; Vidor, F.F.; Vollbrecht, J.; Kitzerow, H.; Paradies, J.; Hilleringmann, U.


Du Plessis, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 : 8-10 October 2018, Skukuza, South Africa
Bellingham, WA: SPIE, 2019 (Proceedings of SPIE 11043)
ISBN: 978-1-5106-2753-6
ISBN: 978-1-5106-2752-9
Paper 1104314, 6 S.
South African Conference on Sensors, MEMS, and Electro-Optic Systems (SMEOS) <5, 2018, Skukuza>
Fraunhofer ENAS ()

The Internet of Things (IoT) is a main driving force for research efforts in the area of low-cost electronics. Low-cost solutions for the upgrade of already existing everyday objects by sensors or RFID tags are needed. Key elements of such upgrading technologies are often thin-film transistors (TFTs). In this article we analysed the structurability of the commercially available, high-k dielectric ino® flex T3 by means of common used optical photolithographic techniques and wet-etching processes and its influence on the TFT performance. Furthermore, the impact of an alkanethiol treatment of the drain and source contacts on the charge carrier injection from the metal into the semiconducting layer was investigated. As active semiconductor a dithienothiophene (DTT) derivate was used.