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Nanoparticles and Organic Semiconductors for Flexible Electronics

: Hilleringmann, U.; Reker, J.; Meyers, T.; Vidor, F.F.; Bezuidenhout, P.H.; Joubert, T.-H.


Du Plessis, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 : 8-10 October 2018, Skukuza, South Africa
Bellingham, WA: SPIE, 2019 (Proceedings of SPIE 11043)
ISBN: 978-1-5106-2753-6
ISBN: 978-1-5106-2752-9
Paper 1104303, 6 S.
South African Conference on Sensors, MEMS, and Electro-Optic Systems (SMEOS) <5, 2018, Skukuza>
Fraunhofer ENAS ()

Key issues for flexible electronics are low temperature processing, cost-efficient semiconducting and dielectric materials, and sufficient performance of the integrated TFT devices. To achieve high performance flexible circuits, contact resistances of today’s transistors must be reduced. Additionally, the parasitic overlap capacitances between the transistor’s electrodes need to be minimized. The inverted staggered transistor setup with self-aligned gate fulfills these requests. Nevertheless, the integrated devices suffer on poor AC characteristics due to limited performance of the common gate dielectric layers. The gate voltage has no direct access to the semiconductor surface, either due to rechargeable surface states and polarization effects or because of low-k values. Consequently, new flexible high-k dielectrics must be implemented in TFT device integration.