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Mechanical deformation on nanoparticle-based thin-film transistors

: Vidor, F.F.; Meyers, T.; Reker, J.; Mueller, K.; Wirth, G.I.; Hilleringmann, U.


Du Plessis, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 : 8-10 October 2018, Skukuza, South Africa
Bellingham, WA: SPIE, 2019 (Proceedings of SPIE 11043)
ISBN: 978-1-5106-2753-6
ISBN: 978-1-5106-2752-9
Paper 1104315, 6 S.
South African Conference on Sensors, MEMS, and Electro-Optic Systems (SMEOS) <5, 2018, Skukuza>
Fraunhofer ENAS ()

Thin-film transistors (TFTs) are the pivotal elements driving electrical current in innovative systems. These applications emerge adding new functionalities to every-day products; therefore, new challenges are faced. Electric components in flexible displays, RFID tags, or electronics skin for health monitoring are subjected to a high degree of mechanical deformation. Nonetheless, the systems have to operate properly despite external influences. In this study, a brief review of the mechanical deformation on the electrical characteristics of nanoparticle-based TFTs is presented Conjointly, a case-of-study considering low-cost ZnO nanoparticle-based TFTs on PET substrate is analyzed. The TFTs were integrated on a freestanding substrate replicating a more realistic scenario for a later large-scale production. Fabrication steps with a maximum temperature of 120°C were employed availing the integration process to a wider range of substrates. As gate dielectric, a spin-on highk nanocomposite was selected in order to favor the mechanical stability of the layer as well as its permittivity. Moreover, the integration routine was adapted in order to reduce parasitic overlapping capacitances in the transistors. The TFTs were electrically characterized either in a flat state or under mechanical deformation, employing different bending directions as well as deformations parallel or perpendicular to the transistor channel.