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The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides

Status und zukünftige Entwicklung innovativer optoelektronischer Bauelemente auf der Basis von Gruppe III-Nitriden auf SiC und von Gruppe III-Antimonides
: Stath, N.; Haerle, V.; Wagner, J.


Materials Science and Engineering, B. Solid state materials for advanced technology 80 (2001), S.224-231
ISSN: 0921-5107
Fraunhofer IAF ()
optoelectronic device; optoelektronisches Bauelement; light emitting diode; Leuchtdiode; group III-nitrides; Gruppe III-Nitride; group-III-antimonides; Gruppe-III-Antimonide

High-brightness nitride-based LEDs have been grown on SiC substrates, which offers many advantages in the production both from epitaxial, chip and device processing point of view. Optimized InGaN/GaN/GaAIN MQW structures and improved chip and package designs were developed, resulting in optical outputs that exceed 7 mW at 20 mA in a 5 mm axial lamp. InGaN oxide stripe lasers (450 µm x 3.5 µm) with an emission wavelength around 420 nm were fabricated showing threshold currents of 330 mA and turn-on voltages of about 21V operated under pulse current injections at room temperature. Strained layer GaInAsSb/AlGaAsSb quantum well lasers operating near room temperature with emission wavelengths up to 2.26 µm and a cw output of 240 mW were demonstrated. Short-period InAs/GaInSb superlattices with different InAs layer widths have been used for the fabrication of photodiodes, showing responsitivity spectra with cut-off wavelengths of 4.5 and 10 µm, respectively.