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2018
Conference Paper
Titel
Ultrabroadband terahertz detectors based on CMOS field-effect transistors with integrated antennas
Abstract
We report on the modeling, implementation and characterization of optimized, ultrabroadband antenna-coupled field-effect transistors for the detection of terahertz (THz) radiation. The detectors were fabricated in 90-nm silicon CMOS technology with integrated bow-tie and log-spiral antennas. We also investigated a third design with a narrowband dipole antenna. In the frequency range from 0.5 to 1.5 THz, the detector with the bow-tie antenna design exhibited a nearly flat frequency response at an optical responsivity of ~100 V/W. We found minimum optical noise equivalent powers (NEPs) as low as 48 pW/SRHz at 0.6 THz and 70 pW/SRHz at 1.5 THz. The dipole-design detector achieved an optical NEP of 17 pW/SRHz at resonance frequency of 490 GHz. Our detectors were optimized with the help of a self-developed circuit model based on device parameters such as transistor geometry, antenna impedance matching and the peculiarities of the employed fabrication technology.
Author(s)
Ikamas, K.
Institute of Applied Electrodynamics and Telecommunications, Vilnius University, 10257 Vilnius, Lithuania and General Jonas Zemaitis Military Academy of Lithuania, LT-10322, Vilnius, Lithuania
Cibiraite, Dovile
Physikalisches Institut, Goethe Universität Frankfurt, D-60438 Frankfurt, Germany
Lisauskas, Alvydas
Institute of Applied Electrodynamics and Telecommunications, Vilnius University, 10257 Vilnius, Lithuania