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Rhodium doped InGaAs

A superior ultrafast photoconductor
: Kohlhaas, R.B.; Globisch, B.; Nellen, S.; Liebermeister, L.; Schell, M.; Richter, P.; Koch, M.; Semtsiv, M.P.; Masselink, W.T.


Applied Physics Letters 112 (2018), Nr.10, Art.102101, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer HHI ()

The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP grown by molecular beam epitaxy are investigated. When InGaAs:Rh is used as an ultrafast photoconductor, carrier lifetimes as short as 100 fs for optically excited electrons are measured. Rh doping compensates free carriers so that a near intrinsic carrier concentration can be achieved. At the same time, InGaAs:Rh exhibits a large electron mobility of 1000 cm2/V s. Therefore, this material is a very promising candidate for application as a semi-insulating layer, THz antenna, or semiconductor saturable absorber mirror.