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Modelling the refractive index behavior of Al,P-doped SiO2, fabricated by means of all-solution doping, in the vicinity of Al:P = 1:1

: Kuhn, S.; Hein, S.; Hupel, C.; Nold, J.; Haarlammert, N.; Schreiber, T.; Eberhardt, R.; Tünnermann, A.

Volltext ()

Optical Materials Express 8 (2018), Nr.5, S.1328-1340
ISSN: 2159-3930
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IOF ()

A novel and simple solution doping technique is used to explore the refractive index behavior of Al,P-doped SiO2 in the vicinity of the Al:P-ratio of 1:1 at low doping concentrations (0.4 up to 2.0 mol% Al2O3 and/or P2O5). It is found that even if Al:P = 1:1 is matched precisely, an index increase is observed. This is in contradiction to previous findings in the literature and the already sophisticated models need to be refined in this region. In the proposed model, an incomplete formation of AlPO4 is assumed and solves the contradiction. Furthermore, the presented model can be combined with previous literature models.