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A double-stream Xe:He jet plasma emission in the vicinity of 6.7 nm

: Chkhalo, N.I.; Garakhin, S.A.; Golubev, S.V.; Lopatin, A.Y.; Nechay, A.N.; Pestov, A.E.; Salashchenko, N.N.; Toropov, M.N.; Tsybin, N.N.; Vodopyanov, A.V.; Yulin, S.


Applied Physics Letters 112 (2018), Nr.22, Art.221101, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer IOF ()

We present the results of investigations of extreme ultraviolet (EUV) light emission in the range from 5 to 10 nm. The light source was a pulsed “double-stream” Xe:He gas jet target irradiated by a laser beam with a power density of ∼1011 W/cm2. The radiation spectra were measured with a Czerny-Turner monochromator with a plane diffraction grating. The conversion efficiency of the laser energy into EUV radiation caused by Xe+14…+16 ion emission in the range of 6–8 nm was measured using a calibrated power meter. The conversion efficiency of the laser radiation into EUV in the vicinity of 6.7 nm was (2.17 ± 0.13)% in a 1 nm spectral band. In the spectral band of the real optical system (0.7% for La/B multilayer mirrors) emitted into the half-space, it was (0.1 ± 0.006)%. The results of this study provide an impetus for further research on laser plasma sources for maskless EUV lithography at a wavelength of 6.7 nm.