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Residual strain in annealed GaAs single crystal wafers measured by scanning infrared polariscopy and x-ray diffraction and topography

: Herms, M.; Fukuzawa, M.; Melov, V.G.; Schreiber, J.; Möck, P.; Yamada, M.


Journal of Crystal Growth 210 (2000), S.172-176
ISSN: 0022-0248
Fraunhofer IZFP ()
GaAs; residual strain; polariscopy; x-ray diffraction; x-ray topography

We have compared the strain data in GaAs wafers, as-grown as well as annealed, determined by means of the scanning infrared polariscope (SIRP) with data of high-resolution X-ray diffraction (HRXD) and qualitative results of a synchrotron based, single-crystal X-ray transmission topography (SXRTT) study. The in-plane strain component measured by SIRP throughout the wafer thickness was about 105, while it derived from the single components xx,yy, and xy determined by HRXD at a penetrated layer close to the surface was above 104. Consequently, we assume that a strong strain gradient exists between the surface and the bulk.