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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

: Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Calvo, J.; Zimmermann, K.; Müller, J.


IEEE transactions on electron devices 65 (2018), Nr.9, S.3769-3774
ISSN: 0018-9383
Fraunhofer IPMS ()

We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the permittivity (k) value of the interface layer on the performance of the metal-ferroelectric-insulator-semiconductor (MFIS)-FE-HfO 2 FeFET is studied in terms of its switching characteristics, endurance, and retention. In contrast to the previous work, the FE Si:HfO 2 -integrated FeFET devices show a low-power operation capability as well as an improved endurance characteristics without jeopardizing high-temperature retention. The utilization of an optimized SiON interface layer for MFIS-HfO 2 FeFET stack is discussed, and the improvements are outlined with reference to a standard low-k SiO 2 interface.