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Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

: Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L.


Solid-State Electronics 144 (2018), S.101-105
ISSN: 0038-1101
Fraunhofer IISB ()
carrier lifetime; efficiency; ion implantation; ion; modulation; silicon carbide; conductivity modulation; emitter efficiency; emitter injection efficiency; experimental approach; injection efficiency; MPS diode; PiN diode; voltage charateristic; diode

In this study, the influence of the emitter efficiency on the forward current voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.