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A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects

: Liang, J.; Ramos, R.; Dijon, J.; Okuno, H.; Kalita, D.; Renaud, D.; Lee, J.; Georgiev, V.P.; Berrada, S.; Sadi, T.; Asenov, A.; Uhlig, B.; Lilienthal, K.; Dhavamani, A.; Könemann, F.; Gotsmann, B.; Goncalves, G.; Chen, B.; Teo, K.; Pandey, R.R.; Todri-Sanial, A.


Institute of Electrical and Electronics Engineers -IEEE-:
International Electron Devices Meeting, IEDM 2017. Technical digest : 2-6 December 2017, San Francisco, CA, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-3559-9
ISBN: 978-1-5386-3558-2
ISBN: 978-1-5386-3560-5
International Electron Devices Meeting (IEDM) <63, 2017, San Francisco/Calif.>
Fraunhofer IPMS ()

We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next generation back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical conductance up to 90% by converting semiconducting shells to metallic. Circuit-level simulations predict up to 88% signal delay improvement with doped vs. pristine CNT. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction which is a milestone result for future CNT interconnect technology.