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Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology

 
: Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F.

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Institute of Electrical and Electronics Engineers -IEEE-:
11th German Microwave Conference, GeMiC 2018 : Riding the green waves, 12-14 March 2018, Freiburg, Germany
Piscataway, NJ: IEEE, 2018
ISBN: 978-3-9812668-8-7
ISBN: 978-1-5386-3740-1
S.13-16
German Microwave Conference (GeMiC) <11, 2018, Freiburg>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
gallium nitride; millimeter-wave integrated circuit (MMIC); Q-band; satellite communication

Abstract
Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5-42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.

: http://publica.fraunhofer.de/dokumente/N-520438.html