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Cu-In Fine-Pitch-Interconnects with Enhanced Shear Strength

: Bickel, S.; Höhne, R.; Panchenko, I.; Meyer, J.; Wolf, M.J.


Karikalan, S. ; Institute of Electrical and Electronics Engineers -IEEE-:
68th Electronic Components and Technology Conference, ECTC 2018. Proceedings : 29 May-1 June 2018, San Diego, California
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5000-4
ISBN: 978-1-5386-4999-2
ISBN: 978-1-5386-4998-5
Electronic Components and Technology Conference (ECTC) <68, 2018, San Diego/Calif.>
Fraunhofer IZM ()

The heterogeneous 3D integration of temperature sensitive components requires a further development of joining processes at low temperatures. A viable approach is based on In as the low-melting component for eutectic/solid-liquid-interdiffusion (SLID) bonding. In our present study, we investigated the effect of different fluxes and processing conditions on the interconnect quality. The shear strength of the Cu-In fine-pitch interconnects was determined by shearing single-stack samples. Nearly defect-free joining zones and shear strengths up to 120 MPa indicate a high potential of the Cu-In SLID bonding technology.