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Optimization of inline processes for the production of freestanding epitaxially grown thin films for solar cells

 
: Ivanov, Alexey; Sorgenfrei, R.; Gust, Elke; Barth, Philipp; Nieuwenhuysen, Kris van; Kühnhold-Pospischil, Saskia; Riepe, Stephan; Janz, Stefan

:
Volltext urn:nbn:de:0011-n-5199132 (789 KByte PDF)
MD5 Fingerprint: fec645734f278847b916afde88ab031f
Erstellt am: 1.12.2018


Verlinden, P. ; WIP - Renewable Energies, München:
35th European Photovoltaic Solar Energy Conference and Exhibition 2018 : Proceedings of the international conference held in Brussels, Belgium, 24 September-28 September 2018; DVD-ROM
München: WIP, 2018
ISBN: 978-3-936338-50-8
ISBN: 3-936338-50-7
S.309-313
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <35, 2018, Brussels>
European Commission EC
FP7-Energy; 609788; CHEETAH
Cost-reduction through material optimisation and Higher EnErgy outpuT of solAr pHotovoltaic modules - joining Europe’s Research and Development efforts in support of its PV industry
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
thin film solar cell; manufacturing and processing; porous silicon; epitaxy; electrochemical etching

Abstract
In this publication we discuss inline aspects of fabricating freestanding epitaxially grown thin silicon for solar cells. Especially the inline electrochemical porosification and its limitations are discussed and homogeneity improvements achieved with aid of electric simulations are presented. Different types of inhomogeneity for porous silicon layers lead to difficulties when forming a proper separation layer through reorganization and the detachment yield of the epitaxial thin film is affected. One of the solutions to ensure good detachment of the films is to form several local separation layers in a kind of puff pastry like structure where detachment of epitaxial film might proceed in any of the separation layers thus increasing yield. However, in case of too high porosity of the highly porous layer, large cavities without smaller supporting silicon pillars can collapse during reorganization and the surface layer can re-attach to the substrate making detachment of this area impossible. Additionally, local warping of the reorganized template before epitaxy can lead to detrimental defects like stacking faults.

: http://publica.fraunhofer.de/dokumente/N-519913.html