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Temperature-dependant growth of PbTe pulsed laser deposited films on various substrates

: Dauscher, A.; Dinescu, M.; Boffoué, O.M.; Jacquot, A.; Lenoir, B.


Thin solid films 497 (2006), Nr.1-2, S.170-176
ISSN: 0040-6090
Fraunhofer IPM ()
lead telluride; laser ablation; structural property

Thin films of PbTe were grown on various substrates (glass, Si(100), Si(111), Ba F2(111)) using pulsed laser deposition. The growth temperature was varied from 90 to 300 °C. Morphological and structural analyses have been performed by atomic force microscopy, X-ray diffraction and transmission electron microscopy. The composition transfer from target to substrate has also been considered through electron probe micro-analysis and secondary ion mass spectroscopy. Strong influence of both parameters, nature of the substrate and deposition temperature, on the film growth and film quality has been evidenced.