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TLS-dicing for SiC - Latest assessment results

: Lewke, D.; Cerezuela Barreto, M.; Dohnke, K.; Zühlke, H.-U.; Belgardt, C.; Schellenberger, M.


Stahlbush, R.:
Silicon Carbide and Related Materials 2017 : International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, September 17-22, 2017, Washington, DC
Durnten-Zurich: TTP, 2018 (Materials Science Forum 924)
ISBN: 978-3-0357-1145-5
ISBN: 978-3-0357-2145-4
ISBN: 978-3-0357-3145-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2017, Washington/DC>
Fraunhofer IISB ()

With the gaining demand for SiC semiconductor devices it is more and more challenging to meet the requirements for SiC volume production with the state of the art wafer dicing technology. In order to overcome this challenge the laser based dicing technology Thermal Laser Separation (TLS-Dicingâ¢) was assessed for SiC volume production within the European project SEA4KET. This paper presents the key results of this project. It could be demonstrated that the demand of SiC volume production regarding throughput and cost as well as edge quality and electrical performance of diced chips can be met with TLS-Dicingâ¢.