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Process-induced diffusion phenomena in advanced CMOS technologies

Prozessbedingte Diffusionsphänomene in fortschrittlichen CMOS Technologien
: Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.


Öchsner, A.:
2nd International Conference on Diffusion in Solids and Liquids, DSL 2006 : Aveiro, Portugal, 26-28.July 2006
Stafa-Zurich: Trans Tech Publications, 2006 (Defect and Diffusion Forum 258-260)
ISBN: 3-908451-36-1
International Conference on Diffusion in Solids and Liquids (DSL) <2, 2006, Aveiro>
Fraunhofer IISB ()
CMOS technology; transient diffusion; transient activation; pattern effect; hot-shield annealing; flash annealing; numerical modeling; process simulation

The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.