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Defect functional structures of 4H-SiC and diamond induced by ion implantation: MD simulation and spectral characterization

Presentation held at COSIRES 2018, The 2018 Computer Simulation of Radiation Effects in Solids, June 18-22, Shanghai, China
 
: Xu, Zongwei; Zhao, Junlei; Djurabekova, Flyura; Rommel, Mathias; Nordlund, Kai

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Präsentation urn:nbn:de:0011-n-5153335 (8.8 MByte PDF)
MD5 Fingerprint: efd1887b8038e5b2dc4e708f9116f9b7
Erstellt am: 23.10.2018


2018, 27 Folien
International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES) <2018, Shanghai>
Englisch
Vortrag, Elektronische Publikation
Fraunhofer IISB ()
silicon carbide; diamond; defect; ion implantation; MD simulation; characterization

: http://publica.fraunhofer.de/dokumente/N-515333.html