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  4. Prediction of SRAM reliability under mechanical stress induced by harsh environments
 
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2018
Conference Paper
Title

Prediction of SRAM reliability under mechanical stress induced by harsh environments

Abstract
On the example of a 28nm SRAM array, this work presents a novel reliability study which takes into account the effect of externally applied mechanical stress in circuit simulations. This method is able to predict the bit failures caused by the stress via the piezoresistive effect. The stability of each single SRAM cell is simulated using static noise margin. Finally, the whole array's behavior is reproduced by including device parameter variations in Monte-Carlo simulations. The results show good agreement with corresponding experiments in which mechanical stress was introduced into the SRAM array by indentation. This validates the presented simulation method for future use in the design of electronic products, especially for harsh environment applications, where high stress is expected.
Author(s)
Warmuth, Jens
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Giering, Kay-Uwe  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Lange, André  orcid-logo
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Clausner, André  
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Schlipf, Simon  
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Kurz, Gottfried
GLOBALFOUNDRIES LLC & Co. KG Dresden, Germany
Otto, Michael
GLOBALFOUNDRIES LLC & Co. KG Dresden, Germany
Paul, Jens
GLOBALFOUNDRIES LLC & Co. KG Dresden, Germany
Jancke, Roland  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Aal, Andreas
Volkswagen AG, Wolfsburg, Germany
Gall, Martin
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Zschech, Ehrenfried
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Mainwork
48th European Solid-State Device Research Conference, ESSDERC 2018. Proceedings  
Project(s)
RESIST
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Conference
European Solid-State Device Research Conference (ESSDERC) 2018  
DOI
10.24406/publica-r-401723
10.1109/ESSDERC.2018.8486911
File(s)
N-512727.pdf (3.87 MB)
Language
English
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Keyword(s)
  • SRAM stability

  • SRAM reliability

  • mechanical stress

  • device simulation

  • piezoresistance

  • SPICE-simulation

  • Monte-Carlo simulation

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