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Linear broadband GaN MMICs for Ku-band applications

Lineare Breitband GaN MMICs für Ku-Band Anwendungen
 
: Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W.

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Sowers, J. ; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 2006. CD-ROM : San Francisco, California, June 11 - 16, 2006
Piscataway, NY: IEEE, 2006
ISBN: 0-7803-9542-5
S.1324-1326
International Microwave Symposium (IMS) <2006, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
linear power amplifier; linearer Leistungsverstärker; GaN; HEMT; MMIC; Ku-Band

Abstract
AIGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadband amplifiers. Electrical performance data and assembly technology issues are presented in this paper.
The linear broadband amplifier MMIC operates in the frequency range from 9 GHz to 19 GHz and is fabricated in microstrip technology including via-holes. The measured small signal gain is about 13 dB and the output power at 1 dB compression is in the range of 27dBm. Two-tone measurements show good linearity. Up to 26 dBm output power the IM3 value is better than 30 dBc.
A reliable assembly process for the MMICs is necessary in order to achieve good thermal conductivity between the underlying SiC wafer substrate and the heatspreader beneath.

: http://publica.fraunhofer.de/dokumente/N-51086.html