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Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects

Poster presented at ECSCRM 2018, 12th European Conference on Silicon Carbide & Related Materials, September 2-6, 2018, Birmingham, UK
 
: Xu, Zongwei; Song, Y.; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, F.Z.

:
Poster urn:nbn:de:0011-n-5100259 (1.4 MByte PDF)
MD5 Fingerprint: 49cb2b322dd33625b35a1b8baa0906c0
Erstellt am: 20.9.2018


2018, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; raman spectroscopy; ion implantation; defect

: http://publica.fraunhofer.de/dokumente/N-510025.html