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Two-stage GaN based multiband power amplifier for software defined radio applications

Ein zweistufiger GaN-Multiband-Leistungsverstärker für software-definierte Funkanwendungen
: Naß, T.; Wiegner, D.; Seyfried, U.; Templ, W.; Weber, S.; Wörner, S.; Klose, P.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Kappeler, O.; Kiefer, R.

Jäger, D. ; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
Fourth Joint Symposium on Opto- and Microelectronic Devices and Circuits, SODC 2006. Digest : September 3 - 8, 2006, Duisburg, Germany
Duisburg, 2006
Symposium on Opto- and Microelectronic Devices and Circuits (SODC) <4, 2006, Duisburg>
Fraunhofer IAF ()
GaN-HEMT technology; Multiband; power amplifier; Leistungsverstärker; W-CDMA; digital predistortion; digitale Vorverzerrung; software-defined radio; software definierte Funkanwendung

GaN HFETs have been proposed for high power and high bandwidth applications and reached tremendous output power levels. However, there are relatively few circuit examples for multiband power amplifiers fulfilling the requirements of future multiband/multistandard capable 3G/4G base stations, especially for higher output power levels. This work presents promising results of a realized two-stage GaN based wideband power amplifier demonstrator. The amplifier addresses medium range multiband base station applications in the L- and S-Band. The amplifier has been characterized by using unclipped single carrier W-CDMA signals with and without use of digital predistortion. The two-stage amplifier module shows a promising high bandwidth of several 100 MHz, covering GSM, UMTS and WiMAX bands for output power levels up to 10 W average while meeting the 3GPP ACLR specification in a wide frequency range, if digital pre-distortion is applied.