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Novel approach for the bonding of III-V on silicon tandem solar cells with a transparent conductive adhesive

 
: Heitmann, Ulrike; Kluska, S.; Bartsch, Jonas; Hauser, Hubert; Ivanov, Alexy; Janz, Stefan

:
Postprint urn:nbn:de:0011-n-5071166 (724 KByte PDF)
MD5 Fingerprint: dce1579630c5adf77107fa334bb6276b
Erstellt am: 7.9.2018


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 : A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC, 10-15 June 2018, Waikoloa Village, HI, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-8529-7
ISBN: 978-1-5386-8530-3
S.201-205
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
Photovoltaic Science and Engineering Conference (PVSEC) <28, 2018, Waikoloa/Hawaii>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <34, 2018, Waikoloa/Hawaii>
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727497; SiTaSol
Application relevant validation of c-Si based tandem solar cell processes with 30 % efficiency target
Bundesministerium für Wirtschaft und Technologie BMWi
0324151A; SOLGEL-PV
Multifunktionale Sol-Gel-Schichten für die PV-Industrie; Teilvorhaben: Materialien, Nanostrukturierung, Integration, Silizium- und Tandemsolarzellen
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
tandem solar cells; bonding; III-V on Si; Photovoltaik; Neuartige Photovoltaik-Technologie; Tandemsolarzelle; kristallines Silicium; solar cell

Abstract
The currently used options for the monolithic interconnection of sub-cells in a Si and III-V tandem solar device are direct wafer-bonding or hetero-epitaxy. Both methods are costly and difficult to transfer into an industrial process. This work presents a novel, scalable and cost -efficient process for efficient process for the interconnection of semiconductor substrates by using a transparent conductive oxide (TCO) interlayer. The TCO material is sprayed from a solution onto both sub-cells which are subsequently connected by using a hot press. The resulting bond shows optical absorption below 2% and a connecting resistivity of 2 Ωcm². Bonded samples withstood all further processing steps and thereby demonstrated mechanical stability of the bond.

: http://publica.fraunhofer.de/dokumente/N-507116.html