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Potential analysis of a rear-side passivation for multi-junction space solar cells based on germanium substrates

Paper presented at the 45th IEEE Photovoltaic Specialists Conference, June 10th - 15th, 2018, Waikoloa, Hawaii, USA
: Weiss, Charlotte; Schön, Jonas; Höhn, Oliver; Mohr, Christian; Kurstjens, Rufi; Boizot, Bruno; Janz, Stefan

Postprint urn:nbn:de:0011-n-5071154 (518 KByte PDF)
MD5 Fingerprint: cf22ef35fca1ecf5301ce261c630fc2a
Erstellt am: 7.9.2018

2018, 5 S.
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
European Commission EC
H2020-Industrial Leadership - COMPET - Bottom-up space technologies at low TRL; 687336; SiLaSpaCe
Si based Layer Stacks for Rear-Side Passivation and Enhanced Reflection of GaInP/GaInAs/Ge Triple-Junction Space Solar Cells
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
III-V solar cell; passivation; germanium; lifetime measurement; solar cell simulation; space solar cell; electron irradiation; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; solar cells

For future 4-junction Ge based multi-junction solar cells, the current generated in the Ge sub-cell gets very important. We developed an efficient rear-side passivation stack, which results in minority carrier lifetimes (τeff) ≈ 200 μs and investigated its performance in an accelerated aging experiment (1 MeV electron irradiation). The aging caused a strong lifetime decrease down to τeff = 4 μs, whereas the carrier mobility stayed constant. These experimental values provide the basis for Beginning-of-Life and End-of-Life solar cell simulations, which show that the potential of the rear-side passivation for 3-junction solar-cell performance is limited, but very promising for 4-junction solar cells.