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W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology

 
: Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver

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Institute of Electrical and Electronics Engineers -IEEE-:
11th German Microwave Conference, GeMiC 2018 : Riding the green waves, 12-14 March 2018, Freiburg, Germany
Piscataway, NJ: IEEE, 2018
ISBN: 978-3-9812668-8-7
ISBN: 978-1-5386-3740-1
S.331-334
German Microwave Conference (GeMiC) <11, 2018, Freiburg>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
high-electron-mobility transistor (HEMT); millimeter wave (mmW); millimeter-wave integrated circuit (MMIC); single pole double throw (SPDT); switch; W-band

Abstract
This paper reports on W-band (75 to 110 GHz) single-pole double-throw (SPDT) switch millimeter-wave integrated circuits (MMICs) based on a planar and a tri-gate 100-nmgate-length GaN high-electron-mobility transistor (HEMT) technology. The SPDT switches utilize the well-established quarter-wave stub topology with shunt transistors. For an improved wideband performance, an optimized layout approach is used that connects the shorted stub for the compensation of the capacitance of a shunt transistor at the center of the transistor. The presented SPDT switch MMIC demonstrates for both technology versions a measured average insertion loss of 1.3 dB over the entire W-band with a peak insertion loss of 1.2 and 1.1 dB in the center of the W-band for planar and tri-gate HEMTs, respectively. The one-dB bandwidth is for both MMICs almost an octave. For an input power of at least 25 dBm, both SPDT switches do not show an indication of compression.

: http://publica.fraunhofer.de/dokumente/N-506897.html