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Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

: Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger


International journal of microwave and wireless technologies 10 (2018), Nr.5-6, S.666-673
ISSN: 1759-0795
ISSN: 1759-0787
European Microwave Week (EuMW) <2017, Nuremberg>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
GaN-on-Diamond; power amplifier; semiconductor devices and IC-technologies

We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout) levels. Also, comparisons of 2x1 mm GaN-diodes on Si, PCD, and SCD reveal significantly increased power levels. In summary, we show a promising new GaN-on-diamond technology for future high power, microwave GaN-device applications.