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III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

 
: Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

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Postprint urn:nbn:de:0011-n-5040183 (1.6 MByte PDF)
MD5 Fingerprint: f3254372357649a3cddbbb02e88ba0bf
Erstellt am: 20.2.2019


Nature energy 3 (2018), S.326-333
ISSN: 2058-7546
European Commission EC
H2020; 641023; Nano-Tandem
Nanowire based Tandem Solar Cells
European Commission EC
H2020; 655272; HISTORIC
High efficiency GaInP/GaAs Tandem wafer bonded solar cell on silicon
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324247; PoTaSi
Demonstration des Potentials von monolithischen Tandemsolarzellen aus III-V Halbleitern und Silicium
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; Silicium-Konzentratorsolarzelle

Abstract
Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III–V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III–V/Si solar cells. Here, we demonstrate a III–V/Si cell reaching similar performances to standard III–V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III–V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiO x passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

: http://publica.fraunhofer.de/dokumente/N-504018.html