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High-power 1.9-µm diode laser arrays with reduced far field angle

Hochleistungs-Diodenlaserarrays bei 1.9µm mit reduziertem Fernfeldwinkel
: Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.


IEEE Photonics Technology Letters 18 (2006), Nr.4, S.628-630
ISSN: 1041-1135
Fraunhofer IAF ()
GaSb; high-power diode laser; Hochleistungslaser; diode laser; Diodenlaser; far field; Fernfeld; bar; Barren; laser array; Laserarray

High-power 1.91-µm (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam divergence of 44 deg full-width at half-maximum. For single emitters, a continuous-wave (CW) output power of nearly 2 W has been observed. We have achieved 16.9 W in CW mode at a heat sink temperature of 20 deg C. The efficiencies of more than 25% are among the highest values reported so far for GaSb-based diode lasers, and allow the use of passively cooled and, thus, less expensive heat sink technologies.