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Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes

Kapazitäts-Spannungs Messungen von hochreinen InAs/GaSb Übergitter-Photodioden
 
: Hood, A.; Hoffmann, D.; Wei, Y.; Fuchs, F.; Razeghi, M.

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Applied Physics Letters 88 (2006), Nr.5, Art. 052112, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
CV analysis; CV-Analyse; infrared photodiode; Infrarot-Photodiode; InAs/GaSb superlattice; InAs/GaSb Übergitter; infrared; Infrarot

Abstract
The residual carrier backgrounds of binary type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths around 5 µm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 10(exp 15) cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 10(exp 14) cm-3.

: http://publica.fraunhofer.de/dokumente/N-50386.html