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2006
Journal Article
Titel
Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes
Alternative
Kapazitäts-Spannungs Messungen von hochreinen InAs/GaSb Übergitter-Photodioden
Abstract
The residual carrier backgrounds of binary type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths around 5 µm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 10(exp 15) cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 10(exp 14) cm-3.
Author(s)